1 apr-18-2005 n- & p-channel enhancement mode field effect transistor_preliminary P2804ND5G to-252-5 lead-free niko-sem d2 s2 g2 s1 d1 g1 absolute maximum ratings (t c = 25 c unless otherwise noted) parameters/test conditions symbol n-channel p-channel units drain-source voltage v ds 40 -40 v gate-source voltage v gs 20 20 v t c = 25 c 7 -5.5 continuous drain current t c = 70 c i d 6 -4.5 pulsed drain current 1 i dm 50 -50 a t c = 25 c 3 power dissipation t c = 70 c p d 2.1 w junction & storage temperature range t j , t stg -55 to 150 lead temperature ( 1 / 16 ? from case for 10 sec.) t l 275 c thermal resistance ratings thermal resistance symbol typical maximum units junction-to-case r jc 6 c / w junction-to-ambient r ja 42 c / w 1 pulse width limited by maximum junction temperature. 2 duty cycle 1% electrical characteristics (t c = 25 c, unless otherwise noted) limits unit parameter symbol test conditions min typ max static v gs = 0v, i d = 250 a drain-source breakdown voltage v (br)dss v gs = 0v, i d = -250 a n-ch p-ch 40 -40 v ds = v gs , i d = 250 a gate threshold voltage v gs(th) v ds = v gs , i d = -250 a n-ch p-ch 1.0 -1.0 1.5 -1.5 2.5 -2.5 v v ds = 0v, v gs = 20v gate-body leakage i gss v ds = 0v, v gs = 20v n-ch p-ch 100 100 na g : gate d : drain s : source product summary v (br)dss r ds(on) i d n-channel 40 28m ? 7a p-channel -40 55m ? -5.5a g2 s2 g1 s1 d1/d2 free datasheet http:///
2 apr-18-2005 n- & p-channel enhancement mode field effect transistor_preliminary P2804ND5G to-252-5 lead-free niko-sem v ds = 32v, v gs = 0v v ds = -32v, v gs = 0v n-ch p-ch 1 -1 v ds = 30v, v gs = 0v, t j = 55 c zero gate voltage drain current i dss v ds = -30v, v gs = 0v, t j = 55 c n-ch p-ch 10 -10 a v ds = 5v, v gs = 10v on-state drain current 1 i d(on) v ds =-5v, v gs = -10v n-ch p-ch 50 -50 a v gs = 4.5v, i d = 6a v gs = -4.5v, i d = -4.5a n-ch p-ch 30 65 42 94 v gs = 10v, i d = 7a drain-source on-state resistance 1 r ds(on) v gs = -10v, i d = -5.5a n-ch p-ch 21 38 28 55 m ? v ds = 10v, i d = 7a forward transconductance 1 g fs v ds = -10v, i d = -5.5a n-ch p-ch 19 11 s dynamic input capacitance c iss n-ch p-ch 790 690 988 863 output capacitance c oss n-ch p-ch 175 310 245 430 reverse transfer capacitance c rss n-channel v gs = 0v, v ds = 10v, f = 1mhz p-channel v gs = 0v, v ds = -10v, f = 1mhz n-ch p-ch 65 75 98 113 pf total gate charge 2 q g n-ch p-ch 16 14 gate-source charge 2 q gs n-ch p-ch 2.5 2.2 gate-drain charge 2 q gd n-channel v ds = 0.5v (br)dss , v gs = 10v, i d = 7a p-channel v ds = 0.5v (br)dss , v gs = -10v, i d = -5.5a n-ch p-ch 2.1 1.9 nc free datasheet http:///
3 apr-18-2005 n- & p-channel enhancement mode field effect transistor_preliminary P2804ND5G to-252-5 lead-free niko-sem turn-on delay time 2 t d(on) n-ch p-ch 2.2 6.7 4.4 13.4 rise time 2 t r n-ch p-ch 7.5 9.7 15 19.4 turn-off delay time 2 t d(off) n-ch p-ch 11.8 19.8 21.3 35.6 fall time 2 t f n-channel v ds = 20v i d ? 1a, v gs = 10v, r gen = 6 ? p-channel v ds = -20v i d ? -1a, v gs = -10v, r gen = 6 ? n-ch p-ch 3.7 12.3 7.4 22.2 ns source-drain diode ratin gs and characteristics (t c = 25 c) i f = 7a, v gs = 0v forward voltage 1 v sd i f = -5.5a, v gs = 0v n-ch p-ch 1.2 -1.2 v i f = 8a, dl f /dt = 100a / s reverse recovery time t rr i f = -7a, dl f /dt = 100a / s n-ch p-ch 42 55 ns reverse recovery charge q rr n-ch p-ch 30 52 nc 1 pulse test : pulse width 300 sec, duty cycle 2%. 2 independent of operating temperature. 3 pulse width limited by maximum junction temperature. remark: the product marked with ?P2804ND5G?, date code or lot # orders for parts with lead-free plating can be placed using the pxxxxxxg parts name. free datasheet http:///
4 apr-18-2005 n- & p-channel enhancement mode field effect transistor_preliminary P2804ND5G to-252-5 lead-free niko-sem n-channel body diode forward voltage variation with source current and temperature 25c t = 125c v - body diode forward voltage(v) is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 a gs 1.0 0.8 1.2 -55 c 1.4 free datasheet http:///
5 apr-18-2005 n- & p-channel enhancement mode field effect transistor_preliminary P2804ND5G to-252-5 lead-free niko-sem free datasheet http:///
6 apr-18-2005 n- & p-channel enhancement mode field effect transistor_preliminary P2804ND5G to-252-5 lead-free niko-sem p-channel 25 c -v - body diode forward voltage(v) -is - reverse drain current(a) 0.001 0 0.01 0.1 0.4 sd 0.2 0.6 v = 0v 1 10 100 gs a t = 125 c 1.0 0.8 1.2 -55 c 1.4 free datasheet http:///
7 apr-18-2005 n- & p-channel enhancement mode field effect transistor_preliminary P2804ND5G to-252-5 lead-free niko-sem free datasheet http:///
8 apr-18-2005 n- & p-channel enhancement mode field effect transistor_preliminary P2804ND5G to-252-5 lead-free niko-sem to-252-5 (dpak) mechanical data mm mm dimension min. typ. max. dimension min. typ. max. a 9.0 9.5 10.0 h 1.3 1.5 1.7 b 2.1 2.3 2.5 i 6.3 6.5 6.7 c 0.4 0.5 0.6 j 4.8 5.0 5.2 d 1.1 1.2 1.3 k 0.8 1.3 1.8 e 0.4 0.5 0.6 l 0.3 0.5 0.7 f 0.00 0.3 m 1.1 1.3 1.5 g 5.3 5.5 5.7 n g a h j i b c m l k d e f free datasheet http:///
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